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Freescale Semiconductor Technical Data
Document Number: MW4IC2020N Rev. 9, 5/2006
RF LDMOS Wideband Integrated Power Amplifiers
The MW4IC2020N wideband integrated circuit is designed with on - chip matching that makes it usable from 1600 to 2400 MHz. This multi - stage structure is rated for 26 to 28 Volt operation and covers all typical cellular base station modulation formats. Final Application * Typical Two - Tone Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 Watts PEP, Full Frequency Band Power Gain -- 29 dB IMD -- - 32 dBc Drain Efficiency -- 26% (at 1805 MHz) and 20% (at 1990 MHz) Driver Applications * Typical GSM EDGE Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 Watts Avg., Full Frequency Band Power Gain -- 29 dB Spectral Regrowth @ 400 kHz Offset = - 66 dBc Spectral Regrowth @ 600 kHz Offset = - 77 dBc EVM -- 1% rms * Typical CDMA Performance: VDD = 26 Volts, IDQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 Watt Avg., Full Frequency Band, IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13), Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF. Power Gain -- 30 dB ACPR @ 885 kHz Offset = - 61 dBc in 30 kHz Bandwidth ALT1 @ 1.25 MHz Offset = - 69 dBc in 12.5 kHz Bandwidth ALT2 @ 2.25 MHz Offset = - 59 dBc in 1 MHz Bandwidth * Capable of Handling 3:1 VSWR, @ 26 Vdc, 1990 MHz, 8 Watts CW Output Power * Stable into a 3:1 VSWR. All Spurs Below - 60 dBc @ 100 mW to 8 W CW Pout. * Characterized with Series Equivalent Large - Signal Impedance Parameters * On - Chip Matching (50 Ohm Input, DC Blocked, >5 Ohm Output) * Integrated Temperature Compensation with Enable/Disable Function * On - Chip Current Mirror gm Reference FET for Self Biasing Application (1) * Integrated ESD Protection * 200C Capable Plastic Package * N Suffix Indicates Lead - Free Terminations. RoHS Compliant. * In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel
VRD1 VRG1 VDS2 VDS1
MW4IC2020NBR1 MW4IC2020GNBR1
1805- 1990 MHz, 20 W, 26 V GSM/GSM EDGE, CDMA RF LDMOS WIDEBAND INTEGRATED POWER AMPLIFIERS
CASE 1329 - 09 TO - 272 WB - 16 PLASTIC MW4IC2020NBR1
CASE 1329A - 03 TO - 272 WB - 16 GULL PLASTIC MW4IC2020GNBR1
GND VDS2 VRD1 VRG1 VDS1 3 Stages IC RFin VDS3/RFout
1 2 3 4 5 6 7 8 9 10 11
16 15
GND
14
VDS3/ RFout
RFin
VGS1 VGS2 VGS3
Quiescent Current Temperature Compensation
VGS1 VGS2 VGS3 GND
13 12
GND
(Top View) Note: Exposed backside flag is source terminal for transistors.
Figure 1. Functional Block Diagram
Figure 2. Pin Connections
1. Refer to AN1987, Quiescent Current Control for the RF Integrated Circuit Device Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1987.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MW4IC2020NBR1 MW4IC2020GNBR1 1
RF Device Data Freescale Semiconductor
Table 1. Maximum Ratings
Rating Drain- Source Voltage Gate- Source Voltage Storage Temperature Range Operating Junction Temperature Input Power Symbol VDSS VGS Tstg TJ Pin Value - 0.5, +65 - 0.5, +15 - 65 to +175 200 20 Unit Vdc Vdc C C dBm
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Stage 1 Stage 2 Stage 3 Symbol RJC Value (1) 10.5 5.1 2.3 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) M3 (Minimum) C5 (Minimum)
Table 4. Moisture Sensitivity Level
Test Methodology Per JESD 22 - A113, IPC/JEDEC J - STD - 020 Rating 3 Package Peak Temperature 260 Unit C
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit Functional Tests (In Freescale Wideband 1805 - 1990 MHz Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP, f1 = 1990 MHz, f2 = 1990.1 MHz and f1 = 1805 MHz, f2 = 1805.1 MHz, Two - Tone CW Power Gain Drain Efficiency f1 = 1805 MHz, f2 = 1805.1 MHz f1 = 1990 MHz, f2 = 1990.1 MHz Input Return Loss Intermodulation Distortion Gps D 27 24 18 -- -- 29 26 20 -- - 32 - 10 - 27 dB dBc -- -- dB %
IRL IMD
Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, 1805 MHzDelay
ns
1. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 2. Refer to AN1977, Quiescent Current Thermal Tracking Circuit in the RF Integrated Circuit Family. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1977. (continued)
MW4IC2020NBR1 MW4IC2020GNBR1 2 RF Device Data Freescale Semiconductor
Table 5. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit Typical CDMA Performances (In Modified CDMA Test Fixture, 50 ohm system) VDD = 26 Vdc, DQ1 = 80 mA, IDQ2 = 240 mA, IDQ3 = 250 mA, Pout = 1 W Avg., I1930 MHzTypical GSM EDGE Performances (In Modified GSM EDGE Test Fixture, 50 ohm system) VDD = 26 Vdc, IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA, Pout = 5 W Avg., 1805 MHzMW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 3
VD2 + VD1 + C1 RF INPUT Z1 C7 VG1 VG2 VG3 R1 R2 C4 R3 C6 Z2 6 C10 7 NC 8 9 10 11 Quiescent Current Temperature Compensation C11 C12 C2 C5 1 2 3 NC 4 NC 5 DUT 16 NC 15 C8 Z9 + C3
VD3
14
Z3
C9 Z4
Z5
Z6
Z7 C13 C14
Z8
RF OUTPUT
NC 13 12
Z1 Z2 Z3 Z4 Z5
1.820 x 0.087 Microstrip 0.245 x 0.087 Microstrip 0.345 x 0.236 Microstrip 0.327 x 0.087 Microstrip 0.271 x 0.087 Microstrip
Z6 Z7 Z8 Z9 PCB
0.303 x 0.087 Microstrip 0.640 x 0.087 Microstrip 0.334 x 0.087 Microstrip 1.231 x 0.043 Microstrip Taconic TLX8 - 0300, 0.030, r = 2.55
Figure 3. MW4IC2020NBR1(GNBR1) Test Circuit Schematic
Table 6. MW4IC2020NBR1(GNBR1) Test Circuit Component Designations and Values
Part C1, C2, C3 C4 C5, C6, C8 C7 C9, C11 C10 C12 C13 C14 R1, R2, R3 Description 10 F, 35 V Tantalum Capacitors 220 nF Chip Capacitor (1206) 6.8 pF 100B Chip Capacitors 0.5 pF 100B Chip Capacitor 1.8 pF 100B Chip Capacitors 2.2 pF 100B Chip Capacitor 1 pF 100B Chip Capacitor 0.3 pF 100B Chip Capacitor 10 pF 100B Chip Capacitor 1.8 kW Chip Resistors (1206) Part Number TAJE226M035 12065C224K28 100B6R8CW 100B0R5BW 100B1R8BW 100B2R2BW 100B1R0BW 100B0R3BW 100B100GW Manufacturer AVX AVX ATC ATC ATC ATC ATC ATC ATC
MW4IC2020NBR1 MW4IC2020GNBR1 4 RF Device Data Freescale Semiconductor
C2 VD2 VD1
MW4IC2020 Rev 1
C3
C8 C5
VD3
C1 C6 C14 C7 C9 C10 C4 VG1 R1 R2 VG2 R3 VG3 GND C11 C12 C13
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 4. MW4IC2020NBR1(GNBR1) Test Circuit Component Layout
MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dB)
30 28 26 24 22 20 18 16 1800 1850 1900 f, FREQUENCY (MHz) 1950 VDD = 26 Vdc, Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 100 kHz Tone Spacing
Gps
-5 -10
IRL
-15 -20
D IMD
-25 -30 -35 -40 2000
Figure 5. Two - Tone Wideband Performance
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
-10 -20 -30 5th Order -40 7th Order -50 -60 -70 -80 0.1 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1840 MHz, 100 kHz Tone Spacing 3rd Order
-10 -20 -30 5th Order -40 7th Order -50 -60 -70 -80 VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz, 100 kHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc) IRL, INPUT RETURN LOSS (dB)
32
0
3rd Order
1
10
100
0.1
1
10
100
Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Intermodulation Distortion Products versus Output Power @ 1840 MHz
Figure 7. Intermodulation Distortion Products versus Output Power @ 1960 MHz
35 Gps 33 G ps , POWER GAIN (dB) 31 29 D 27 25 85_C 23 0.1 25_C VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA f = 1960 MHz
36 30 D, DRAIN EFFICIENCY (%) G ps , POWER GAIN (dB) TC = -30_C 24 18 12 6 0 1 10 100 Pout, OUTPUT POWER (WATTS) CW
35 TC = -30_C 33 -30_C 31 25_C 29 27 25 23 0.1 85_C D 85_C 25_C Gps
18 15 12 9 6 VDD = 26 Vdc, IDQ1 = 80 mA 3 IDQ2 = 240 mA, IDQ3 = 250 mA f = 1960 MHz, 1-Carrier N-CDMA 0 1 10 Pout, OUTPUT POWER (WATTS) AVG. D, DRAIN EFFICIENCY (%)
Figure 8. Power Gain and Drain Efficiency versus Output Power MW4IC2020NBR1 MW4IC2020GNBR1 6
Figure 9. Power Gain and Drain Efficiency versus Output Power RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
ACPR, ADJACENT CHANNEL POWER RATIO (dBc) ALT 1 & 2, ALTERNATE 1 & 2 CHANNEL POWER RATIO (dB
-45 VDD = 26 Vdc, IDQ1 = 80 mA IDQ2 = 240 mA, IDQ3 = 250 mA -50 f = 1960 MHz, Single-Carrier N-CDMA -55 -60 -65 ALT2 -70 ALT1 -75 0.1 1 85_C
85_C
TC = 25_C -30_C -30_C 25_C
34 32 G ps , POWER GAIN (dB) 30 28 26 24
TC = -30_C
25_C
ACPR
85_C
85_C VDD = 26 Vdc Pout = 20 W (PEP) IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA 1850 1900 f, FREQUENCY (MHz) 1950 2000
-30_C 25_C 10
22 1800
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Alternate Channel Power Ratio, Alternate 1 and 2 Channel Power Ratio versus Output Power
4 4 3.5 3 2.5 2 1.5 1 0.5 0 0.1 1 10 100 0.1
Figure 11. Power Gain versus Frequency
EVM, ERROR VECTOR MAGNITUDE (% rms)
VDD = 26 Vdc 3.5 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz 3 2.5 2 1.5 1 0.5 0
EVM, ERROR VECTOR MAGNITUDE (% rms)
TC = 85_C 25_C -30_C
VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz
TC = 85_C 25_C -30_C
1
10
100
Pout, OUTPUT POWER (WATTS) AVG.
Pout, OUTPUT POWER (WATTS) AVG.
Figure 12. EVM versus Output Power @ 1840 MHz
Figure 13. EVM versus Output Power @ 1960 MHz
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
SPECTRAL REGROWTH @ 400 kHz AND 600 kHz (dBc)
-50 TC = 25_C -55 -60 -65 SR 400 kHz -70 -75 SR 600 kHz -80 -85 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. VDD = 26 Vdc IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1840 MHz 85_C -30_C
-50 VDD = 26 Vdc -55 IDQ1 = 80 mA, IDQ2 = 230 mA, IDQ3 = 230 mA EDGE Modulation, f = 1960 MHz -60 -65 SR 400 kHz -70 -75 SR 600 kHz -80 -85 0.1 1 10 100 Pout, OUTPUT POWER (WATTS) AVG. 25_C TC = 25_C 85_C 85_C -30_C
-30_C
85_C 25_C -30_C
Figure 14. Spectral Regrowth at 400 and 600 kHz versus Output Power @ 1840 MHz
Figure 15. Spectral Regrowth at 400 and 600 kHz versus Output Power @ 1960 MHz MW4IC2020NBR1 MW4IC2020GNBR1
RF Device Data Freescale Semiconductor
7
TYPICAL CHARACTERISTICS
1.E+09 MTTF FACTOR (HOURS X AMPS 2 )
1.E+08 2nd Stage 1.E+07 1st Stage
3rd Stage
1.E+06
1.E+05
1.E+04 90
100
110
120
130
140
150
160
170
180 190
TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 16. MTTF Factor versus Junction Temperature
MW4IC2020NBR1 MW4IC2020GNBR1 8 RF Device Data Freescale Semiconductor
f = 1805 MHz
f = 1990 MHz Zload
f = 1805 MHz
f = 1990 MHz Zin Zo = 50
VDD = 26 V, IDQ1 = 80 mA, IDQ2 = 200 mA, IDQ3 = 300 mA, Pout = 20 W PEP f MHz 1805 1842 1880 1930 1960 1990 Zin Zin 40.00 + j6.50 40.00 + j2.00 40.00 - j1.50 40.00 - j1.80 40.00 - j2.10 40.00 - j2.60 Zload 8.75 - j1.42 7.00 - j2.70 5.90 - j2.97 5.46 - j3.20 4.30 - j3.35 4.45 - j3.30
= Device input impedance as measured from gate to ground.
Zload = Test circuit impedance as measured from drain to ground.
Device Under Test
Output Matching Network
Z
in
Z
load
Figure 17. Series Equivalent Input and Load Impedance MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 9
PACKAGE DIMENSIONS
MW4IC2020NBR1 MW4IC2020GNBR1 10 RF Device Data Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 11
MW4IC2020NBR1 MW4IC2020GNBR1 12 RF Device Data Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 13
MW4IC2020NBR1 MW4IC2020GNBR1 14 RF Device Data Freescale Semiconductor
MW4IC2020NBR1 MW4IC2020GNBR1 RF Device Data Freescale Semiconductor 15
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MW4IC2020NBR1 MW4IC2020GNBR1
Rev. 16 9, 5/2006 Document Number: MW4IC2020N
RF Device Data Freescale Semiconductor

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